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| MAPRST2729-170M RADAR PULSED POWER TRANSISTOR Preliminary Specification, Rev 03/30/2005 FEATURES 170 Wpk, 2700 - 2900 MHz, 100s Pulse Width, 10% Duty Cycle OUTLINE DRAWING * Designed for ATC Radar Applications * NPN Silicon Microwave Power Transistor * Common Base Configuration * Broadband Class C Operation * High Efficiency Interdigitated Geometry * Diffused Emitter Ballasting Resistors * Gold Metallization System * Internal Input and Output Impedance Matching * Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25C Storage Temperature Junction Temperature VCES VEBO IC PD TSTG TJ 65 3.0 27 TBD -65 to +200 200 Units V V A W C C ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Power Output Power Gain Collector Efficiency Input Return Loss Load Mismatch Stability Load Mismatch Tolerance BVCES ICES RTH Pout GP 65 170 8.5 40 10 - Max 15 .25 (TBD) 1.5:1 2:1 Units V mA C/W Wpk dB % dB IC=50mA VCE=36V Test Conditions VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz C RL VSWR-S VSWR-T BROADBAND TEST FIXTURE IMPEDANCE F (MHz) Z IF () Z OF () 2700 2800 2900 (TBD) (TBD) (TBD) (TBD) (TBD) (TBD) M/A-COM, RF POWER INNOVATIONS * 1742 CRENSHAW BLVD * TORRANCE, CA 90501 (310) 320-6160 * FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. |
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